advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 40v simple drive requirement r ds(on) 13.5m fast switching characteristic i d 33a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.6 /w rthj-a 62.5 /w parameter 1 total power dissipation 4 2 storage temperature range operating junction temperature range -55 to 150 thermal data 16.2 total power dissipation 27.1 -55 to 150 pulsed drain current 1 drain current, v gs @ 10v drain current, v gs @ 10v 20.8 drain-source voltage 40 gate-source voltage + 20 33 AP4N013H halogen-free product 201709081 120 maximum thermal resistance, junction-ambient (pcb mount) 4 parameter rating g d s a p4604 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s a p4n013 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the low connection resistance. g d s to-252(h) .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 13.5 m ? v gs =4.5v, i d =12a - - 22 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =18a - 42 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =12a - 16 25.6 nc q gs gate-source charge v ds =32v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time v ds =20v - 7 - ns t r rise time i d =18a - 37 - ns t d(off) turn-off delay time r g =3.3 -24- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 1630 2608 pf c oss output capacitance v ds =25v - 115 - pf c rss reverse transfer capacitance f=1.0mhz - 90 - pf r g gate resistance f=1.0mhz - 1.1 2.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =18a, v gs =0v - - 1.2 v t rr reverse recovery time i s =18a, v gs =0 v ,-9- ns q rr reverse recovery charge di/dt=100a/s - 3 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =40v , l=0.1mh , r g =25 , v gs =10v 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP4N013H .
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP4N013H 0 20 40 60 80 100 120 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g =4.0v t c =150 o c 8 9 10 11 12 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =250ua .
AP4N013H fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. switching time waveform temperature 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 800 1600 2400 3200 1 1121314151 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =32v 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 10us 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t d(on) t r t d(off) t f v ds v gs 10% 90% .
AP4N013H fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. transfer characteristics 5 0 20 40 60 80 100 0 20406080100 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v 0 10 20 30 40 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 10 20 30 40 50 60 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c .
AP4N013H marking information 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 4n013 ywwsss .
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